?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH40N60SMDF rev. c0 FGH40N60SMDF 600 v, 40 a field stop igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c80 a collector current @ t c = 100 o c40 a i cm (1) pulsed collector current @ t c = 25 o c 120 a p d maximum power dissipation @ t c = 25 o c349 w maximum power dissipation @ t c = 100 o c174 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.43 o c / w r ? jc (diode) thermal resistance, junction to case - 1.45 o c / w r ? ja thermal resistance, junction to ambient - 40 o c / w g e c e c g collector (flange) FGH40N60SMDF 600 v, 40 a field stop igbt features ? maximum junction temperature : t j = 175c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.9v(typ.) @ i c = 40 a ? high input impedance ? fast switching: e off = 6.5 uj/a ? tightened parameter distribution ?rohs compliant applications ? solar inverter, ups, welder, pfc, telecom, ess general description using novel field stop igbt tech nology, fairchild?s new series of field stop 2 nd generation igbts offer the optimum perfor- mance for solar inverter, ups, welder, telecom, ess and pfc applications where low conduction and switching losses are essential.
FGH40N60SMDF 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH40N60SMDF rev. c0 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box FGH40N60SMDF FGH40N60SMDF to-247 tube 30ea - symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 3.5 4.6 6.0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -1.92.5v i c = 40a , v ge = 15v, t c = 150 o c -2.1- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1880 - pf c oes output capacitance - 180 - pf c res reverse transfer capacitance - 50 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 ? , v ge = 15v, inductive load, t c = 25 o c -12- ns t r rise time - 20 - ns t d(off) turn-off delay time - 92 - ns t f fall time - 13 20 ns e on turn-on switching loss - 1.3 - mj e off turn-off switching loss - 0.26 - mj e ts total switching loss - 1.56 - mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 ? , v ge = 15v, inductive load, t c = 150 o c -12- ns t r rise time - 19 - ns t d(off) turn-off delay time - 97 - ns t f fall time - 14 21 ns e on turn-on switching loss - 2.09 - mj e off turn-off switching loss - 0.44 - mj e ts total switching loss - 2.53 - mj q g total gate charge v ce = 400v, i c = 40a, v ge = 15v -119- nc q ge gate to emitter charge - 13 - nc q gc gate to collector charge - 58 - nc
FGH40N60SMDF 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH40N60SMDF rev. c0 electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 o c- 1.3 1.7 v t c = 150 o c- 1.2 t rr diode reverse recovery time i es =20a, di es /dt = 200a/ ? s t c = 25 o c - 70 90 ns t c = 150 o c - 126 q rr diode reverse recovery charge t c = 25 o c - 207 290 nc t c = 150 o c - 638
FGH40N60SMDF 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH40N60SMDF rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0246 0 30 60 90 120 v ge = 8v 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 30 60 90 120 v ge = 8v 20v t c = 150 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 30 60 90 120 common emitter v ge = 15v t c = 25 o c t c = 150 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 30 60 90 120 common emitter v ce = 20v t c = 25 o c t c = 150 o c collector current, i c [a] gate-emitter voltage,v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ]
FGH40N60SMDF 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH40N60SMDF rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resi stance 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 80a i c = 20a 40a common emitter t c = 150 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0 40 80 120 0 3 6 9 12 15 300v common emitter t c = 25 o c 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 0 1000 2000 3000 4000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 1020304050 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 150 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v]
FGH40N60SMDF 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH40N60SMDF rev. c0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 1020304050 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 150 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] ? t c = 25 o c t c = 150 o c t r t d(on) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 150 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 0.1 1 5 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 150 o c e on e off switching loss [mj] gate resistance, r g [ ? ] collector current, i c [a] collector-emitter voltage, v ce [v] 20 30 40 50 60 70 80 0.1 1 6 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 150 o c e on e off switching loss [mj] collector current, i c [a]
FGH40N60SMDF 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH40N60SMDF rev. c0 typical performance characteristics figure 19. forward characteristics figure 20. reverse current figure 21. stored charge figure 22. reverse recovery time figure 23.transient thermal impedance of igbt 0 0.5 1.0 1.5 2.0 2.5 1 10 100 t c = 75 o c t c = 25 o c t c = 150 o c forward voltage, v f [v] forward current, i f [a] t c = 25 o c t c = 75 o c ---- t c = 150 o c 0 100 200 300 400 500 600 1e-3 0.01 0.1 1 10 100 1000 t c = 25 o c t c = 150 o c t c = 75 o c reverse recovery currnet, i rr [ ? a] v r [v] 5 10152025303540 0 50 100 150 200 250 300 350 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forwad current, i f [a] 5 10152025303540 40 60 80 100 120 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 0.00001 0.0001 0.001 0.01 0.1 1 0.006 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGH40N60SMDF 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH40N60SMDF rev. c0 mechanical dimensions to-247a03
FGH40N60SMDF 600 v, 40 a field stop igbt ?2010 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH40N60SMDF rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes withou t further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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